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Electrical Characteristics T J = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t on
t d(on)
Turn-On Time
Turn-On Delay Time
-
-
-
12
78
-
ns
ns
t r
t d(off)
t f
t off
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
V DD = 50V, I D = 44A,
V GS = 10V, R GS = 11 Ω
-
-
-
-
37
24
44
-
-
-
-
70
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 44A
I SD = 21A
I F = 44A, dI SD /dt = 100A/ μ s
-
-
-
-
0.9
0.8
44
58
1.25
1.0
57
76
V
V
ns
nC
Notes:
1: Starting T J = 25 o C, L = 0.2mH, I AS = 27A
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD3672_F085 Rev. C
3
www.fairchildsemi.com
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